Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate-Reference-Cited by-同舟云学术

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Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate

Published:2016-04-25 Issue:9 Volume:24 Page:9673
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kafar A.,Stanczyk S.,Sarzynski M.,Grzanka S.,Goss J.,Targowski G.,Nowakowska-Siwinska A.,Suski T.,Perlin P.

Funder

Polish National Center for Research and Development

Polish National Science Centre

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference24 articles.

1. Extremely broadband AlGaAs/GaAs superluminescent diodes

2. InAs∕GaAs quantum-dot superluminescent diodes with 110 nm bandwidth

3. High power broadband superluminescent diodes with chirped multiple quantum dots

4. Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

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