Single-photon counting for the 1300–1600-nm range by use of Peltier-cooled and passively quenched InGaAs avalanche photodiodes-Reference-Cited by-同舟云学术

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Single-photon counting for the 1300–1600-nm range by use of Peltier-cooled and passively quenched InGaAs avalanche photodiodes

Published:2000-12-20 Issue:36 Volume:39 Page:6746
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Rarity John G.,Wall Thomas E.,Ridley Kevin D.,Owens Philippa C. M.,Tapster Paul R.

Publisher

The Optical Society

Reference12 articles.

1. Characterization of silicon avalanche photodiodes for photon correlation measurements 1: Passive quenching

2. Characterization of silicon avalanche photodiodes for photon correlation measurements 2: Active quenching

3. Photon counting with passively quenched germanium avalanche

4. Room‐temperature 1.3‐μm optical time domain reflectometer using a photon counting InGaAs/InP avalanche detector

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1. Development of InGaAs/AlGaAsSb Geiger Mode Avalanche Photodiodes;IEEE Transactions on Electron Devices;2024-03

2. Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode;IEEE Access;2024

3. InGaAs/InP高速正弦门控单光子探测器后脉冲抑制方案;Infrared and Laser Engineering;2024

4. Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detector;Applied Optics;2023-04-17

5. Compact Free-Running InGaAs/InP Single-Photon Detector With 40% Detection Efficiency and 2.3 Kcps Dark Count Rate;IEEE Journal of Selected Topics in Quantum Electronics;2023

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