Affiliation:
1. Institut national de la recherché scientifique (INRS)-Université du Québec
2. New Jersey Institute of Technology
Abstract
This paper presents alternate
pairs of InGaN/GaN prestrained layers with varying indium
compositions, which are
inserted between the GaN/InGaN
MQW active region and the n-GaN layer in a light-emitting diode (LED)
nanostructure in order to obtain enhanced optical
characteristics. The device is mounted on a silicon substrate followed
by a GaN buffer layer that promotes charge injection by minimizing the
energy barrier between the electrode and active layers. The designed
device attains more than 2.897% enhancement in efficiency when
compared with the conventional LED, which is attributed to the
reduction of a polarization field within the MQW region. The proposed
device with 15% indium composition in the prestrained layer attains a
maximum efficiency of 85.21% and a minimized efficiency droop of
3.848% at an injection current of 40 mA, with high luminous
power in the output spectral range. The device also shows a minimum
blueshift in the spectral range, indicating a decrease in the
piezoelectric polarization.
Funder
National Science Foundation
Science and Engineering Research
Board
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献