Performance comparison of p-side-up thin-film AlGaInP light emitting diodes with aluminum-doped zinc oxide and indium tin oxide transparent conductive layers-Reference-Cited by-同舟云学术

Performance comparison of p-side-up thin-film AlGaInP light emitting diodes with aluminum-doped zinc oxide and indium tin oxide transparent conductive layers

Published:2016-03-28 Issue:4 Volume:6 Page:1349
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Tseng Ming-Chun,Wuu Dong-Sing,Chen Chi-Lu,Lee Hsin-Ying,Lin Yu-Chang,Horng Ray-Hua

Funder

Hsinchu Science Park

Ministry of Science and Technology (MOST)

Taiwan Science Park

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference12 articles.

1. High-Efficiency 1-mm$^{2}$ AlGaInP LEDs Sandwiched by ITO Omni-Directional Reflector and Current-Spreading Layer

2. P-side up AlGaInP-based light emitting diodes with dot-patterned GaAs contact layers

3. Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

4. Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals

5. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

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