THz emission characteristics from p/n junctions with metal lines under non-bias conditions for LSI failure analysis-Reference-Cited by-同舟云学术

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THz emission characteristics from p/n junctions with metal lines under non-bias conditions for LSI failure analysis

Published:2011-05-19 Issue:11 Volume:19 Page:10864
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Yamashita Masatsugu,Otani Chiko,Matsumoto Toru,Midoh Yoshihiro,Miura Katsuyoshi,Nakamae Koji,Nikawa Kiyoshi,Kim Sunmi,Murakami Hironaru,Tonouchi Masayoshi

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference21 articles.

1. Terahertz time-domain spectroscopy of water vapor

2. Imaging with terahertz waves

3. Recent advances in terahertz imaging

4. Materials for terahertz science and technology

5. Cutting-edge terahertz technology

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1. On-Chip Modification of Titanium Electrothermal Characteristics by Joule Heating: Application to Terahertz Microbolometer;Nanomaterials;2024-01-19

2. THz for semiconductor assurance;Materials for Electronics Security and Assurance;2024

3. Sensing and Nondestructive Testing Applications of Terahertz Spectroscopy and Imaging Systems: State-of-the-Art and State-of-the-Practice;IEEE Transactions on Instrumentation and Measurement;2023

4. Probing the surface potential of SiO2/4H-SiC(0001) by terahertz emission spectroscopy;Journal of Applied Physics;2021-09-21

5. Review of THz-based semiconductor assurance;Optical Engineering;2021-06-03

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