Quantum control study of ultrafast optical responses in semiconductor quantum dot devices
Author:
Funder
National Science Council Taiwan (NSC)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference33 articles.
1. Enhancing the optical properties of InAs quantum dots by an InAlAsSb overgrown layer
2. Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 131 μm
3. Multidimensional quantum well laser and temperature dependence of its threshold current
4. 1.3 μm room-temperature GaAs-based quantum-dot laser
5. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
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1. Three-Level Optical Stark Effect of Excitons in GaAs Cylindrical Quantum Wires;Journal of Nanomaterials;2021-03-17
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