Fabrication of ultra-high-Q Ta2O5 microdisks by photolithography-assisted chemo-mechanical etching

Author:

Li Minghui12,Zhao Guanghui13,Lin Jintian12ORCID,Gao RenhongORCID,Guan Jianglin,Li CHuntao,Qiao Qian13,Qiu Yingnuo12,Deng Li,Qiao Lingling1,Wang Min,Cheng Ya1345ORCID

Affiliation:

1. Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS)

2. University of Chinese Academy of Sciences

3. ShanghaiTech University

4. Shanghai Research Center for Quantum Sciences

5. Hefei National Laboratory

Abstract

Tantalum pentoxide (Ta2O5) is widely recognized as a promising material platform for photonic integration. This is primarily attributed to its exceptional properties including large bandgap of 3.8 eV, broad transparency window ranging from 300 nm to 8000 nm, high nonlinear refractive index of ∼7.2 × 10−19 m2/W, low optical loss, moderate refractive index of 2.05, low intrinsic material stress, compatibility with CMOS technology, and high solubility for rare-earth ions. However, dry etching of Ta2O5 is challenging and typically results in sidewall roughness with substantial scattering losses. Here, we report on fabrication of a high-Q whispering gallery mode (WGM) microdisk with a diameter of 120 µm and a loaded Q factor of 1.92 × 106 by femtosecond laser photolithography assisted chemo-mechanical etching (PLACE) on amorphous Ta2O5 film. Thanks to the suppression of sidewall scattering, the loaded Q factor is two orders of magnitude higher than the best reported value in dispersion engineered Ta2O5 microresonators.

Funder

Science and Technology Commission of Shanghai Municipality

Fundamental Research Funds for the Central Universities

National Key R&D Program of China

National Natural Science Foundation of China

Innovation Program for Quantum Science and Technology

Shanghai Sailing Program

Publisher

Optica Publishing Group

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