Nanostructure study of the coalescence growth of GaN columns with molecular beam epitaxy
Author:
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Investigation of fast and slow decays in InGaN/GaN quantum wells
2. Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
3. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
4. Optical absorption properties of Mg-doped GaN nanocolumns
5. Molecular beam epitaxial growth of high-quality GaN nanocolumns
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1. InGaN/GaN Hybrid‐Nanostructure Light Emitting Diodes with Emission Wavelength Green and Beyond;physica status solidi (RRL) – Rapid Research Letters;2024-07-16
2. Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods;Optical Materials Express;2017-01-05
3. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications;Advanced Materials;2016-08-04
4. Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD;Nanoscale Research Letters;2014-07-09
5. Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD;Nanoscale Research Letters;2014-07-04
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