InN/GaN alternative growth of thick InGaN wells on GaN-based light emitting diodes
Author:
Funder
National Science Council Taiwan (NSC)
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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1. Enhancing the efficiency of GaN-based laser diodes by the designing of a p-AlGaN cladding layer and an upper waveguide layer;Optical Materials Express;2021-05-21
2. Quantitative study on the mechanisms underlying the phonon bottleneck effect in InN/InGaN multiple quantum wells;Applied Physics Letters;2020-03-09
3. Study the Mechanisms of Enhanced Phonon Bottleneck Effect for the Absorber of Hot Carrier Solar Cell in III-V Multiple Quantum Wells;IOP Conference Series: Materials Science and Engineering;2020-03-01
4. Improved optoelectronic performance of green light-emitting diodes by employing GaAlInN quantum wells without electron blocking layer;Physica E: Low-dimensional Systems and Nanostructures;2019-02
5. On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy;Optical Materials Express;2016-05-23
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