Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells

Published:2018-05-15 Issue:6 Volume:8 Page:1528
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Peng Ruoshi,Xu Shengrui,Zhang Jinfeng,Zhang Jincheng,Du Jinjuan,Zhao Ying,Fan Xiaomeng,Hao Yue

Funder

Fundamental Research Funds for the Central Universities

National Key R and D Program of China

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. III–V nitride based light-emitting devices

2. High performance thin-film flip-chip InGaN–GaN light-emitting diodes

3. Development of InGaN-based red LED grown on (0001) polar surface

4. Temperature dependence of the optical properties of violet, blue and green InGaN/GaN single quantum well light-emitting diodes

5. White light emitting diodes with super-high luminous efficacy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure;Materials;2020-12-31

2. Effect of Indium Composition on the Microstructural Properties and Performance of InGaN/GaN MQWs Solar Cells;IEEE Access;2019

3. Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition;Optical Materials Express;2018-09-21

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