Light emission from localised point defects induced in GaN crystal by a femtosecond-pulsed laser
Author:
Funder
Ministry of Education - Singapore (MOE)
National Research Foundation Singapore (NRF)
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference33 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2. GaN Substrates for III-Nitride Devices
3. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates
4. Luminescence from defects in GaN
5. Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes
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