Light emission from localised point defects induced in GaN crystal by a femtosecond-pulsed laser-Reference-Cited by-同舟云学术

Light emission from localised point defects induced in GaN crystal by a femtosecond-pulsed laser

Published:2018-08-16 Issue:9 Volume:8 Page:2703
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Saleem Umar^ORCID,Birowosuto Muhammad Danang,Hou Songyan^ORCID,Maurice Ange,Kang Tay Beng,Teo Edwin Hang Tong,Tchernycheva Maria,Gogneau Noelle,Wang Hong

Funder

Ministry of Education - Singapore (MOE)

National Research Foundation Singapore (NRF)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference33 articles.

1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination

2. GaN Substrates for III-Nitride Devices

3. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

4. Luminescence from defects in GaN

5. Yellow Luminescence of Gallium Nitride Generated by Carbon Defect Complexes

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