Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes

Published:2017-07-13 Issue:15 Volume:25 Page:17556
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Park Jae-Seong,Sung Young Hoon,Na Jin-Young,Kang Daesung,Kim Sun-Kyung,Lee Heon,Seong Tae-Yeon

Funder

LG Innotek Co., Ltd

Ministry of Science, ICT and Future Planning (MSIP)

National Research Foundation of Korea (NRF)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference32 articles.

1. Illumination with solid state lighting technology

2. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

3. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

4. The efficiency challenge of nitride light-emitting diodes for lighting

5. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Performance and Temperature‐Stable InGaN Single‐Quantum‐Well Red Light‐Emitting Diodes via Selective Hydrogen Passivation;physica status solidi (a);2024-04-21

2. Enhancing current spreading performance of GaN-based ultraviolet light-emitting diode chips through periodic doping composite barrier structures;Ferroelectrics;2023-10-26

3. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01

4. Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation;Crystals;2022-12-01

5. Study of GaN/InGaN Light-Emitting Diodes with Specific Zirconium Oxide (ZrO₂) Layers;ECS Journal of Solid State Science and Technology;2022-07-01

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