Transparent and air stable organic field effect transistors with ordered layers of dibenzo[d,d]thieno[3,2-b;4,5-b′]dithiophene obtained from solution-Reference-Cited by-同舟云学术

Transparent and air stable organic field effect transistors with ordered layers of dibenzo[d,d]thieno[3,2-b;4,5-b′]dithiophene obtained from solution

Published:2012-08 Issue:10 Volume:34 Page:1660-1663
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Marszalek T.,Kucinska M.,Tszydel I.,Gravalidis C.,Kalfagiannis N.,Logothetidis S.,Yassar A.,Miozzo L.,Nosal A.,Gazicki-Lipman M.,Jung J.,Ulanski J.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference15 articles.

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3. High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential

4. A. Tracz, J. Ulanski, T. Pakula, M. Kryszewski, P-131986 Polish Patent, 1986.

5. Efficient High Area OFETs by Solution Based Processing of a π-Electron Rich Donor

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