High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential-Reference-Cited by-同舟云学术

High-Performance Field-Effect Transistor Based on Dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an Easily Synthesized Semiconductor with High Ionization Potential

Published:2007-10-05 Issue:19 Volume:19 Page:3008-3011
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Gao J. H.,Li R. J.,Li L. Q.,Meng Q.,Jiang H.,Li H. X.,Hu W. P.

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.200701167/fullpdf

Reference28 articles.

1. Indolo[3,2-b]carbazole-Based Thin-Film Transistors with High Mobility and Stability

2. Recent Advances in Semiconductor Performance and Printing Processes for Organic Transistor-Based Electronics

3. Low Threshold Voltage Transistors Based on Individual Single-Crystalline Submicrometer-Sized Ribbons of Copper Phthalocyanine

4. Field-effect transistors based on short organic molecules

5. Organic thin film transistors based on stable amorphous ladder tetraazapentacenes semiconductors

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