Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes-Reference-Cited by-同舟云学术

Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes

Published:2012-06 Issue:8 Volume:34 Page:1327-1329
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Liu Wen-Jie,Hu Xiao-Long,Zhang Jiang-Yong,Weng Guo-En,Lv Xue-Qin,Huang Hui-Jun,Chen Ming,Cai Xiao-Mei,Ying Lei-Ying,Zhang Bao-Ping

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference12 articles.

1. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications

2. InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

3. Improvements of N-Side-up GaN Light-Emitting Diodes Performance by Indium–Tin-Oxide/Al Mirror

4. Phase distribution in eutectic AuSn layer changed by temperature ramping rate and its effect on the performance of GaN-based vertical structure LEDs

5. Self-Assembled Two-Dimensional Surface Structures for Beam Shaping of GaN-Based Vertical-Injection Light-Emitting Diodes

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