Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering-Reference-Cited by-同舟云学术

Photoluminescence properties of the Yb:Er co-doped Al2O3 thin film fabricated by microwave ECR plasma source enhanced RF magnetron sputtering

Published:2006-09 Issue:12 Volume:28 Page:1344-1349
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Song Qi,Li Cheng-Ren,Li Jian-Yong,Ding Wan-Yu,Li Shu-Feng,Xu Jun,Deng Xin-Lu,Song Chang-Lie

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference21 articles.

1. Erbium implanted thin film photonic materials

2. Photoluminescence characterization of Er‐implanted Al2O3films

3. Net optical gain at 1.53 μm in Er‐doped Al2O3 waveguides on silicon

4. Upconversion in Er‐implanted Al2O3waveguides

5. Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers

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