Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films-Reference-Cited by-同舟云学术

Influence of indium concentration on the structural and optoelectronic properties of indium selenide thin films

Published:2014-12 Issue: Volume:38 Page:217-222
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Yan Yong,Li Shasha,Yu Zhou,Liu Lian,Yan Chuanpeng,Zhang Yong,Zhao Yong

Funder

Foundation of National Magnetic Confinement Fusion Science Program

Program of International S&T Cooperation

National Natural Science Foundation of China

Science Foundation of Sichuan Province

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry,Spectroscopy

Reference35 articles.

1. Thickness-tunable band gap modulation in γ-In2Se3

2. Growth and characterization of a novel In2Se3 structure

3. Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation

4. Buffer layers in Cu(In,Ga)Se2 solar cells and modules

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carrier-recirculating broadband photodetector with high gain based on van der Waals In2Se3/MoS2 heterostructure;Applied Surface Science;2024-03

2. Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica*;Chinese Physics B;2021-01-01

3. Preparation and characterization of layer-diffusion processed InBi2Se4 thin films for photovoltaics application;Optik;2020-10

4. Influence of deposition conditions on nanostructured InSe thin films;Current Applied Physics;2019-12

5. 2D semiconducting α-In2Se3 single crystals: Growth and huge anisotropy during transport;Journal of Alloys and Compounds;2019-11