Preillumination – Induced change of electronic transport properties of TlGaSe2 semiconductor
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference23 articles.
1. Effect of external fields on the memory effect of the incommensurate phase in the ferroelectric-semiconductor TlGaSe2
2. Effect of illumination on negative linear expansion of TlGaSe2 layered crystals
3. Effect of electric field on negative linear expansion of ferroelectric-semiconductor TlGaSe2
4. Imprint electric field controlled electronic transport in TlGaSe2 crystals
5. Unusual Urbach tail in TlGaSe2 ferroelectric-semiconductor with incommensurate phase
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Franz–Keldysh effect in the optical absorption spectrum of a TlGaSe2 layered semiconductor caused by charged native defects;Semiconductor Science and Technology;2024-02-15
2. A Study of Thermoelectric Performance of TlGaSe 2 Layered Dichalcogenides from First‐Principles Calculations: Vacancy Defects Modeling and Engineering;physica status solidi (b);2021-11-09
3. Defects forming the optical absorption edge in TlGaSe2 layered crystal;Journal of Physics and Chemistry of Solids;2016-09
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