Growth of void-free 3C-SiC films by modified two-step carbonization methods
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference15 articles.
1. Growth and Properties of β‐SiC Single Crystals
2. High-field transport in wide-band-gap semiconductors
3. Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy
4. New susceptor arrangement for the epitaxial growth of β-SiC on silicon
5. Theoretical investigations of a highly mismatched interface: SiC/Si(001)
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1. Mechanism of SiC formation by Si surface carbonization using CO gas;Applied Surface Science;2024-07
2. The growth of 3C-SiC on Si substrate using a SiCN buffer layer;Thin Solid Films;2018-09
3. Boron doping induced thermal conductivity enhancement of water-based 3C-Si(B)C nanofluids;Nanotechnology;2018-06-22
4. From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction;Materials Science in Semiconductor Processing;2018-05
5. The formation of SiCN film on Si substrate by constant-source diffusion;Thin Solid Films;2017-11
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