Structure and growth of single crystal SiP 2 using flux method-Reference-Cited by-同舟云学术

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Structure and growth of single crystal SiP 2 using flux method

Published:2014-11 Issue: Volume:37 Page:1-5
ISSN:1293-2558
Container-title:Solid State Sciences
language:en
Short-container-title:Solid State Sciences

Author:

Zhang Xiang,Wang Shanpeng,Ruan Huapeng,Zhang Guodong,Tao Xutang

Funder

National Natural Science Foundation of China

People's Republic of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference25 articles.

1. Growth and characterization of large CdSiP2 single crystals

2. Growth of CdSiP2 single crystals by self-seeding vertical Bridgman method

3. Composition, structure, bonding and thermoelectric properties of “CuT2P3” and “CuT4P3”, members of the T1−x(CuP3)xseries with T being Si and Ge

4. Thermoelectric properties of polycrystalline NiSi3P4

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1. Anisotropic phonon properties in SiP2 monolayer: A first-principles study;Vacuum;2024-04

2. Exploring pristine and transition metal doped SiP₂ monolayer as a promising anode material for metal (Li, Na, Mg) ion battery;Materials Advances;2024

3. An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces;Nature Communications;2023-09-09

4. 2D SiP₂/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity;ACS Applied Materials & Interfaces;2023-03-20

5. Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients;IEEE Transactions on Electron Devices;2023-03

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