Phonon peculiarities at the high-pressure phase transition of B4.3C boron carbide
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference47 articles.
1. High-pressure phase transition makes B4.3C boron carbide a wide-gap semiconductor
2. Mode Grüneisen parameters of boron carbide
3. New insights into the enigma of boron carbide inverse molecular behavior
4. First-principles study of configurational disorder inB4Cusing a superatom-special quasirandom structure method
5. Local Atomic Arrangements and Band Structure of Boron Carbide
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1. Phase Transitions in Boron Carbide;Materials;2023-10-17
2. Electrical conductivity of B∼4.3C boron carbide up to 9 GPa and 1273 K;Solid State Sciences;2023-06
3. Reply to “comment on ‘Raman spectra characterization of boron carbide using first-principles calculations”’;Physica B: Condensed Matter;2023-05
4. Advanced Boron Carbide Matrix Nanocomposites Obtained from Liquid-Charge: Focused Review;Condensed Matter;2023-04-20
5. Comment on “Raman spectra characterization of boron carbide using first-principles calculations” by T. Sahu, A. Bhattacharyya, A. N. Gandi;Physica B: Condensed Matter;2023-02
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