Boron-δ doped Si grown by ultra-high vacuum chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Growth and characterization of a delta‐function doping layer in Si
2. Cold-walled UHV/CVD batch reactor for the growth of Si1−xGex layers
3. UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications
4. Elemental boron doping behavior in silicon molecular beam epitaxy
5. Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6
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