Hole-level structure of double -doped quantum wells in Si: The influence of the split-off band
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference21 articles.
1. Electronic structure of delta-doped quantum well as a function of temperature
2. Admittance spectroscopy studies of boron δ-doped Si quantum wells
3. Intersubband absorption in Si1-xGex/Si and δ-dope Si multiple quantum wells
4. Intersubband Transition in Si-based Quantum Wells and Application for Infrared Photodetectors
5. Band structure of holes inp-type δ-doping quantum wells and superlattices
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Valence band states in Si-based p-type delta-doped field effect transistors;Journal of Physics: Conference Series;2009-05-01
2. Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential;Journal of Physics: Conference Series;2009-05-01
3. k·p calculations of p-type δ-doped quantum wells in Si;Solid-State Electronics;2008-06
4. Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double -doped GaAs quantum wells;Microelectronics Journal;2008-03
5. ENHANCEMENT OF THE ELECTRONIC CONFINEMENT IMPROVES THE MOBILITY IN P-N-P DELTA-DOPED QUANTUM WELLS IN SI;Progress In Electromagnetics Research Letters;2008
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