Strain-compensated InAsP/GaInP multiple-quantum-well waveguide modulators and in situ monitored AlGaAs/AlAs mirrors grown by gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Strain-compensated InAsP/GaInP multiple-quantum-well waveguide modulators and in situ monitored AlGaAs/AlAs mirrors grown by gas-source molecular beam epitaxy

Published:1997-10 Issue:1 Volume:51 Page:1-5
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Tu C.W.,Mei X.B.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference14 articles.

1. Quaternary quantum wells for electro‐optic intensity and phase modulation at 1.3 and 1.55 μm

2. High quality InGaAsP/InP multiple quantum wells for optical modulation from 1 to 1.6 μm

3. Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators

4. 1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

5. Optimization of multiple quantum well structures for waveguide electroabsorption modulators

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1. Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process;Journal of Applied Physics;2004-04

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