Author:
JangJian Shiu-Ko,Wang Ying-Lang,Liao Miao-Cheng,Chang Hung-Jui,Juang Yungder
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference15 articles.
1. International Technology Roadmap for Semiconductors (ITRS), RF & A/MS Technologies for Wireless Chapter, 2004, p. 8.
2. Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
3. S. Decoutere, F. Vleugels, R. Kuhn, R. Loo, M. Caymax, S. Jenei, J. Croon, S.V. Huylenbroeck, M.D. Rold, E. Rosseel, P. Chevalier, P. Coppens, in: Proceedings of IEEE Bipolar/BiCMOS Circuits Technology Meeting, 2000, p. 106.
4. Characterization and comparison of two metal-insulator-metal capacitor schemes in 0.13 μm copper dual damascene metallization process for mixed-mode and RF applications
5. Very high-density (23 fF//spl mu/m/sup 2/) RF MIM capacitors using high-/spl kappa/ TaTiO as the dielectric
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