The electrical property of plasma-treated Ta/TaNx diffusion barrier
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference11 articles.
1. Effect of the Tantalum Barrier Layer on the Electromigration and Stress Migration Resistance of Physical-Vapor-Deposited Copper Interconnect
2. Failure Mechanism of Amorphous and Crystalline Ta-N Films in the Cu/Ta-N/Ta/SiO[sub 2] Structure
3. Physics of Copper in Silicon
4. The impact of layer thickness of IMP-deposited tantalum nitride films on integrity of Cu/TaN/SiO2/Si multilayer structure
5. Tantalum‐based diffusion barriers in Si/Cu VLSI metallizations
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