Effective masses of electrons, heavy holes and positrons in quasi-binary (GaSb)1−x(InAs)x crystals
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference18 articles.
1. Melt growth of quasi-binary (GaSb)1−x(InAs)x crystals
2. Strong band gap narrowing in quasi-binary (GaSb)1−x(InAs)x crystals grown from melt
3. Band gaps and charge distribution in quasi-binary (GaSb) $ \mathsf {_{1-x}}$ (InAs) $ \mathsf {_x}$ crystals
4. Semiconductors and Semimetals;Rode,1975
5. Effective masses of electrons and heavy holes in GaAs, InAs, A1As and their ternary compounds
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