Band gaps and charge distribution in quasi-binary (GaSb) $ \mathsf {_{1-x}}$ (InAs) $ \mathsf {

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Band gaps and charge distribution in quasi-binary (GaSb) $ \mathsf {_{1-x}}$ (InAs) $ \mathsf {_x}$ crystals

Published:2003-03-01 Issue:2 Volume:32 Page:139-143
ISSN:1434-6028
Container-title:The European Physical Journal B - Condensed Matter
language:
Short-container-title:The European Physical Journal B - Condensed Matter

Author:

Bouarissa N.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1140/epjb/e2003-00082-x.pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The structural and optical properties of AlxIn1-xSb ternary alloys;AIP Conference Proceedings;2024

2. Band Structure, Charge Distribution and Optical Properties of AlPxSb1-x Ternary Semiconductor Alloys;Materials Research;2018-05-21

3. Energy gaps, charge distribution and optical properties of AlxIn1−xSb ternary alloys;Infrared Physics & Technology;2015-07

4. Electronic structure and related properties for quasi-binary (GaP)1−x (ZnSe) x crystals;Journal of Structural Chemistry;2013-11

5. Electronic properties of GaxIn1−xP from pseudopotential calculations;Materials Chemistry and Physics;2010-11

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