Dependence of electronic properties on nitrogen concentration in GaAs1−xNx dilute alloys
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference25 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
2. III–nitrides: Growth, characterization, and properties
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4. Band parameters for nitrogen-containing semiconductors
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