Role of growth temperature and oxygen partial pressure on the structural and electrical properties of pulsed laser deposited La1−xSrxnO3−δ thin films
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference31 articles.
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1. Defects induced huge magnetoresistance in epitaxial La1–xSrxMnO3 thin films deposited by magnetic sputtering;Applied Physics Letters;2019-10-28
2. Separation of Curie temperature and insulator-metal transition temperature in the La0.7Sr0.3MnO3 polycrystalline films and its effect on low field magnetoresistance;Journal of Alloys and Compounds;2016-05
3. Pulsed laser deposition of La 0.6 Ca 0.4 Fe 0.8 Ni 0.2 O 3−δ thin films on SrTiO 3 : Preparation, characterization and electrical properties;Thin Solid Films;2014-11
4. Leakage current analysis of La0.67Sr0.33MnO3/Nb:SrTiO3 p–n junctions;Applied Physics A;2014-03-13
5. Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser deposition;Journal of Applied Physics;2014-01-21
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