Defects induced huge magnetoresistance in epitaxial La1–xSrxMnO3 thin films deposited by magnetic sputtering-Reference-Cited by-同舟云学术

Defects induced huge magnetoresistance in epitaxial La1–xSrxMnO3 thin films deposited by magnetic sputtering

Published:2019-10-28 Issue:18 Volume:115 Page:182405
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Xinyue¹,Jin Chao¹^ORCID,Wang Ping¹,Pang Xin¹,Zheng Wanchao¹,Zheng Dongxing¹,Li Zhiqing¹^ORCID,Zheng Rongkun²^ORCID,Bai Haili¹

Affiliation:

1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, People's Republic of China

2. School of Physics, The University of Sydney, NSW 2006, Australia

Funder

National Key Research and Development Program of China

China Scholarship Council

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5120838

Reference41 articles.

1. Growth of colossal magnetoresistance thin films on silicon

2. Magnetic Properties at Surface Boundary of a Half-Metallic FerromagnetLa0.7Sr0.3MnO3

3. Strain-induced elastically controlled magnetic anisotropy switching in epitaxial La0.7Sr0.3MnO3 thin films on BaTiO3 (001)

4. Insulator-metal transition and giant magnetoresistance inLa1−xSrxMnO3

5. Colossal magnetoresistive manganites

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