A novel process for forming an ultra-thin oxynitride film with high nitrogen topping
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference20 articles.
1. Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation
2. Flat-band voltage shifts in p-MOS devices caused by carrier activation in p/sup +/-polycrystalline silicon and boron penetration
3. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film;Micromachines;2019-08-20
2. NITRIDATION OF SILICON WITH AMMONIA AND NITROGEN;International Journal of Nanoscience;2010-06
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