Dopants in Silicon: Activation and Deactivation Kinetics-Reference-Cited by-同舟云学术

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Dopants in Silicon: Activation and Deactivation Kinetics

Published:2001 Issue: Volume: Page:2332-2340
ISSN:
Container-title:Encyclopedia of Materials: Science and Technology
language:
Short-container-title:

Author:

Solmi S.

Publisher

Elsevier

Reference23 articles.

1. Modeling of high-concentration boron-diffusion under amorphization conditions;Baccus;J. Appl. Phys,1995

2. Modeling dynamic clustering of arsenic including non-negligible concentrations of arsenic-point defect pairs;Bauer;IEEE Trans. Semicond. Manuf,1995

3. Electronic quasichemical formalism: Application to arsenic deactivation in silicon;Berding;Phys. Rev. B,1998

4. The Theory of Transformations in Metals and Alloys;Christian,1981

5. Ion pairing effects on substitutional impurity diffusion in silicon;Cowern;Appl. Phys. Lett,1989

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave Effects on Metal–Semiconductor Contact of Heavily Nitrogen-Implanted Silicon;IEEE Transactions on Electron Devices;2024-02

2. Effect of Charged Clusters on the Diffusion of Impurity Atoms in Silicon Crystals;Journal of Engineering Physics and Thermophysics;2017-05

3. Different shapes of impurity concentration profiles formed by long-range interstitial migration;International Journal of Computational Materials Science and Engineering;2016-09

4. On concentration dependence of arsenic diffusivity in silicon;International Journal of Computational Materials Science and Engineering;2016-03

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