Publisher
Springer Science and Business Media LLC
Subject
General Engineering,Condensed Matter Physics
Reference6 articles.
1. S. Solmi, Dopants in silicon: Activation and deactivation kinetics, in: K. H. J. Buschow (Ed.), Encyclopedia of Materials: Science and Technology, Elsevier Science Ltd. (2001), pp. 2331–2340.
2. F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, and A. M. Mironov, Mechanisms of arsenic clustering in silicon, Phys. Rev. B, 74, No. 3, Art. No. 035205 (2006).
3. O. I. Velichko and N. A. Sobolevskaya, Clustering of phosphorus atoms in silicon, Nonlin. Phenom. Complex Syst., 11, No. 3, 316–386 (2008).
4. O. I. Velichko, Processes of Atomic Diffusion in Nonequilibrium State of the Components of the Defect-Impurity System of Silicon Crystals, Candidate′s Dissertation (in Physics and Mathematics), Minsk (1988).
5. S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, Transient enhanced diffusion of arsenic in silicon, J. Appl. Phys., 94, No. 8, 4950–4955 (2003).