Accumulation layer model for Ga2O3 thin-film gas sensors based on the Volkenstein theory of catalysis-Reference-Cited by-同舟云学术

Accumulation layer model for Ga2O3 thin-film gas sensors based on the Volkenstein theory of catalysis

Published:1994-03 Issue:1-3 Volume:18 Page:125-131
ISSN:0925-4005
Container-title:Sensors and Actuators B: Chemical
language:en
Short-container-title:Sensors and Actuators B: Chemical

Author:

Geistlinger Helmut

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin films;Fleischer;Sensors and Actuators B,1992

2. Chemisorption effects on the thin-film conductivity;Geistlinger;Surf. Sci.,1992

3. H2-induced changes in electrical conductivity of β-Ga2O3 thin-film systems;Fleischer;Appl. Phys. A,1992

4. Electron theory of thin-film gas sensors;Geistlinger;Sensors and Actuators B,1993

5. Adsorbed particle statistics in the electronic theory of chemisorption;Kogan;J. Fiz. Chim.,1959

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