Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon-Reference-Cited by-同舟云学术

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Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon

Published:1978-02 Issue:1-3 Volume:149 Page:259-264
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Wach W.,Wittmaack K.

Publisher

Elsevier BV

Subject

General Medicine

Reference15 articles.

1. Secondary ion emission from silicon and silicon oxide

2. Proc. Int. Workshop on Inelastic ion-surface collision;Wittmaack,1977

3. Proc. 5th Int. Conf. on Ion implantation in semiconductors and other materials;Wittmaack,1977

4. Radiation‐enhanced outdiffusion of xenon implanted in aluminum

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1. Sputtering of compound semiconductor surfaces. II. Compositional changes and radiation-induced topography and damage;Critical Reviews in Solid State and Materials Sciences;1994-01

2. Surface and depth analysis based on sputtering;Topics in Applied Physics;1991

3. Angular, energy, and mass distribution of sputtered particles;Topics in Applied Physics;1991

4. Ion implantation of Ti into Al into Ti in the presence of residual and backfilled gases;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-02

5. Ion implantation of Fe and Pd into Ti in the presence of residual and backfilled gases;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-01

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