Experimental method for measuring both atom and carrier concentration profiles in the same sample of ion-implanted silicon layers by radioactive-ion implantation-Reference-Cited by-同舟云学术

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Experimental method for measuring both atom and carrier concentration profiles in the same sample of ion-implanted silicon layers by radioactive-ion implantation

Published:1975-07 Issue:1 Volume:127 Page:93-98
ISSN:0029-554X
Container-title:Nuclear Instruments and Methods
language:en
Short-container-title:Nuclear Instruments and Methods

Author:

Iwaki Masaya,Gamo Kenji,Masuda Kohzo,Namba Susumu,Ishihara Shinji,Kimura Itsuro,Yokota Katsuhiro

Publisher

Elsevier BV

Subject

General Medicine

Reference13 articles.

1. Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles

2. Electrical and backscattering measurements of arsenic implanted silicon

3. RANGE OF ENERGETIC Xe125 IONS IN MONOCRYSTALLINE SILICON

4. Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon

5. Ion implantation in semiconductors and other materials;Iwaki,1973

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Anodic Oxidation of CdTe as a Thin-Layer Removal Technique;Japanese Journal of Applied Physics;1979-01

2. A method for the acceleration of radioactive nuclei;Nuclear Instruments and Methods;1976-11

3. Ion Implantation;Semiconducting Devices;1976

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