Author:
Howe L.M.,Swanson M.L.,Quenneville A.F.
Cited by
23 articles.
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1. Phosphorus implantation into 4H-SiC at room and elevated temperature;Semiconductor Science and Technology;2021-04-21
2. Simulation of channeling in crystals with defects using the CASSIS code;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06
3. Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09
4. LATTICE POSITION OF DISPLACED ATOMS IN BORON IMPLANTED SILICON;Ion Beam Modification of Materials;1996
5. Defect investigation in boron implanted silicon by means of temperature dependent RBS and optical near-edge absorption;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-03