Low energy range distributions of 10B and 11B in amorphous and crystalline silicon
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference22 articles.
1. RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICON
2. Range of implanted boron, phosphorus, and arsenic in silicon
3. Low energy boron and phosphorus implants in silicon (b) doping profiles
4. Proc. 2nd Int. Conf. on Ion implantation in semiconductors;Seidel,1971
5. Boron atom distributions in ion‐implanted silicon by the (n,4He) nuclear reaction
Cited by 47 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Highly accurate nuclear and electronic stopping cross sections derived using Monte Carlo simulations to reproduce measured range data;Journal of Applied Physics;2017-03-14
2. Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding;Surface Science Reports;2013-03
3. Apparent and real transient effects in SIMS depth profiling using oxygen bombardment;Applied Surface Science;2003-01
4. In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
5. Dynamic MC simulation of low-energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3