Ion range and damage depth parameters for 20–200 keV Pb+ ion implantation in Si-Reference-Cited by-同舟云学术

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Ion range and damage depth parameters for 20–200 keV Pb+ ion implantation in Si

Published:1981-12 Issue:1-3 Volume:191 Page:124-134
ISSN:0167-5087
Container-title:Nuclear Instruments and Methods in Physics Research
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Christodoulides C.E.,Kadhim N.J.,Carter G.,Jimenez-Rodriguez J.J.,Gras-Marti A.

Publisher

Elsevier BV

Subject

General Engineering

Reference26 articles.

1. Proc. 2nd Int. Conf. on Ion beam modification of materials;Shannon,1981

2. Ranges and range theories

3. Z1-oscillations in low-energy heavy-ion ranges

4. D.J. O'Connor, B.W. Farmery, D. Chivers and M.W. Thompson, Nucl. Instr. and Meth., to be published.

5. Ion implantation of semiconductors;Carter,1976

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of incidence angle on disorder production in ion implanted Si;Radiation Effects and Defects in Solids;1989-06

2. Radiation damage in Ge induced by Te+ implantation near channeling conditions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-03

3. An attempt to observe collisional mixing in the InGaAs interface system;Vacuum;1988-01

4. Profile Evolution in High-Dose Ion Implantation. A Computer Simulation Study;physica status solidi (a);1986-03-16

5. Depth profiling and diffusion of 22Ne implanted in tantalum by (p, γ) resonance broadening;Nuclear Instruments and Methods in Physics Research;1983-05

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