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Range distributions of energetic ions

  • Published:1982-03 Issue:1-3 Volume:194 Page:101-104
  • ISSN:0167-5087
  • Container-title:Nuclear Instruments and Methods in Physics Research
  • language:en
  • Short-container-title:Nuclear Instruments and Methods in Physics Research

Author:

Cowern N.E.B.

Publisher

Elsevier BV

Subject

General Engineering

Reference8 articles.

1. Projected range statistics;Gibbons,1975

2. Ion implantation range and energy deposition distributions;Brice,1975

3. Tablitsyy parametrov prostranstvennogo raspredeleniya ionnoimplantirovannykh primeseǐ;Burenkov;Izdatel'stvo BGU im. V.I. Lenina,1980

4. Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of high energy ion implantation based on splitting of the Boltzmann transport equation;Computational Materials Science;2002-11

2. High energy ion range and deposited energy calculation using the Boltzmann–Fokker–Planck splitting of the Boltzmann transport equation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-04

3. On the use of the backward Fokker–Planck equation to calculate range profiles;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-09

4. Photoluminescence study of proton-implanted CdTe and ZnTe;Solid State Communications;1990-11

5. Optical Effects of High Energy Implantations in Semiconductors;physica status solidi (b);1989-05-01
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