Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV-Reference-Cited by-同舟云学术

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Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

Published:1980-02 Issue:2 Volume:21 Page:151-158
ISSN:0340-3793
Container-title:Applied physics
language:en
Short-container-title:Appl. Phys.

Author:

Kappert H. F.,Heidemann K. F.,Eichholz D.,te Kaat E.,Tothemund W.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00900677.pdf

Reference34 articles.

1. W.D.Wilson, L.G.Haggmark, J.P.Biersack: Phys. Rev.B15, 2458–2468 (1977)

2. V.Subrahmanyam, M.Kaplan: Phys. Rev.142, 174–178 (1966)

3. M.Kaplan, J.L.Richards: Phys. Rev.145, 153–157 (1966)

4. K.Güttner, S.Hofmann, D.Marx, G.Münzenberg, F.Nickel: Nucl. Instrum. Methods.146, 413–417 (1977)

5. T.E.Pierce, M.Blann: Phys. Rev.173, 390–405 (1968)

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and characterization of Si/SiO2multilayer structures by oxygen ion implantation into silicon;Journal of Applied Physics;1996-11

2. Optical investigation of structures formed by 2 MeV oxygen implantation into silicon;Thin Solid Films;1996-11

3. Structural and Compositional Characterization of High Energy Separation by Implantation of Oxygen Structures Using Infrared Spectroscopy;Journal of The Electrochemical Society;1996-09-01

4. Oxide growth, refractive index, and composition depth profiles of structures formed by 2 MeV oxygen implantation into silicon;Journal of Applied Physics;1995-01-15

5. Defect production in silicon implanted with 13.6 MeV boron ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-11

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