Effect of dual implantation on the amphoteric behavior of group IV ion implanted GaAs
Author:
Publisher
Elsevier BV
Subject
General Medicine
Reference15 articles.
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5. Amphoteric behavior of Ge implants in GaAs
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1. Review—Dopant Selection Considerations and Equilibrium Thermal Processing Limits for n+-In0.53Ga0.47As;ECS Journal of Solid State Science and Technology;2016
2. Coimplantation of carbon implanted GaAs: Energy and dose rate observations;Applied Physics Letters;1995-02-27
3. Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co‐implantation;Applied Physics Letters;1993-12-06
4. A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide;Journal of The Electrochemical Society;1991-11-01
5. Ion Implantation in Iii–V Semiconductors;Materials Processing: Theory and Practices;1989
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