Slow structural transitions of hydrogen in hydrogenated amorphous silicon during low temperature annealing
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
2. Thermal-equilibrium processes in amorphous silicon
3. Mechanisms of thermal equilibration in doped amorphous silicon
4. A SIMS analysis of deuterium diffusion in hydrogenated amorphous silicon
5. Hydrogen diffusion in aSi:H
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1. Low-temperature Al-induced crystallization of amorphous Ge;Journal of Applied Physics;2005-05
2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits;Journal of Applied Physics;2001-09
3. Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H;Annual Review of Materials Research;2001-08
4. Applications of Elastic Recoil Spectrometry to Hydrogen Determination in Solids;Forward Recoil Spectrometry;1996
5. Interaction of aluminum with hydrogenated amorphous silicon at low temperatures;Journal of Applied Physics;1994-04-15
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