Experimental studies of noise in n-GaAs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Experimental studies on 1/f noise
2. Lattice scattering causes 1/ƒ noise
3. Temperature dependence of 1/ƒ noise in epitaxial n-type GaAs
4. Implications of mobility-fluctuation descriptions of 1/f noise in semiconductors
5. Annealing of ion‐implanted resistors reduces the 1/ f noise
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1. Peculiarities of electron distribution function's fluctuations damping in homogeneous semiconductors;Physica B: Condensed Matter;2005-03
2. Dynamics of energy partition among coupled harmonic oscillators in equilibrium;Physica A: Statistical Mechanics and its Applications;2005-02
3. Slow damping of electron distribution function fluctuations in equilibrium semiconductors;SPIE Proceedings;2004-05-25
4. GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES;International Journal of High Speed Electronics and Systems;2004-03
5. Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride;IEE Proceedings - Circuits, Devices and Systems;2002-02-01
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