Implications of mobility-fluctuation descriptions of 1/f noise in semiconductors-Reference-Cited by-同舟云学术

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Implications of mobility-fluctuation descriptions of 1/f noise in semiconductors

Published:1980-05 Issue:2 Volume:100 Page:157-162
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Weissman Michael B.

Publisher

Elsevier BV

Subject

General Engineering

Reference5 articles.

1. 1/f noise in thermo EMF of intrinsic and extrinsic semiconductors

2. Hall Effect Noise

3. Lattice scattering causes 1/ƒ noise

4. Photo and Thermoelectric Effects in Semiconductors;Tauc,1962

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors;Applied Physics Letters;2023-04-24

2. 1/f noise and nonlinear effects in thin metal films;Uspekhi Fizicheskih Nauk;1997

3. Experimental studies of noise in n-GaAs;Physica B: Condensed Matter;1993-07

4. 1/f noise at room temperature in n-type GaAs grown by molecular beam epitaxy;Physica B: Condensed Matter;1991-06

5. A further interpretation of Hooge's 1/ƒ noise formula;Physica B: Condensed Matter;1990-03

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