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Narrow-gap signature of FexCo1−xSi single crystals

  • Published:1993-05 Issue: Volume:186-188 Page:1043-1045
  • ISSN:0921-4526
  • Container-title:Physica B: Condensed Matter
  • language:en
  • Short-container-title:Physica B: Condensed Matter

Author:

Lacerda A.,Zhang H.,Canfield P.C.,Hundley M.F.,Fisk Z.,Thompson J.D.,Seaman C.L.,Maple M.B.,Aeppli G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure, transport and magnetic properties of ultrathin and thin FeSi films on Si(111);Поверхность. Рентгеновские, синхротронные и нейтронные исследования;2024-04-15

2. Structural, Transport, and Magnetic Properties of Ultrathin and Thin FeSi Films on Si(111);Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2024-04

3. Near coincidence of metal-insulator transition and quantum critical fluctuations: Electronic ground state and magnetic order in Fe1−xCoxSi;Physical Review B;2024-02-12

4. New monoclinic ground state of FeSi;Computational Materials Science;2024-01

5. Effects of correlations and temperature on the electronic structures and related physical properties of FeSi and CoSi: a comprehensive study;Journal of Physics: Condensed Matter;2019-02-08
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