Gap formation in CeNiSn at low temperatures-Reference-Cited by-同舟云学术

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Gap formation in CeNiSn at low temperatures

Published:1990-04 Issue:1-3 Volume:163 Page:358-360
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Aliev F.G.,Moshchalkov V.V.,Zalyalyutdinov M.K.,Pak G.I.,Scolozdra R.V.,Alekseev P.A.,Lazukov V.N.,Sadikov I.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Mixed valence properties of YbB12

2. Systematics of valence fluctuating states in f-electron systems

3. Universal relationship of the resistivity and specific heat in heavy-Fermion compounds

4. Optimization of High-Efficiencyn+-p-p+Back-Surface-Field Silicon Solar Cells

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2. Electronic structure, magnetic properties and electrical resistivity of the Fe2V1−xTixAl Heusler alloys: experiment and calculation;Journal of Physics: Condensed Matter;2006-11-01

3. Coherent Kondo insulating and non-Fermi liquid ground states in CeRhSb1−xSnx;Physica B: Condensed Matter;2005-04

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5. Effect of Sn doping on the coherent Kondo gap in CeRhSb and the emergence of a non-Fermi-liquid state inCeRhSb1−xSnx;Physical Review B;2004-12-08

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