Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation-Reference-Cited by-同舟云学术

Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation

Published:2010-04 Issue:4 Volume:87 Page:620-623
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Juang Miin-Horng,Huang C.W.,Wu M.-L.,Hwang C.C.,Wang J.L.,Shye D.C.,Jang S.-L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. F. Hayashi, H. Ohkubo, T. Takahashi, S. Horiba, K. Noda, T. Uchida, T. Shimizu, N. Sugawara, S. Kumashiro, in: International Electronic Devices Meeting Tech Digest, vol. 283, 1996.

2. H. Oshima, S. Morozumi, Future trends for TFT integrated circuits on glass substrates, in: International Electronic Devices Meeting Tech Digest, vol. 157, 1989.

3. Mechanisms of interface trap-induced drain leakage current in off-state n-MOSFET's

4. Anomalous leakage current in LPCVD PolySilicon MOSFET's

5. Numerical analysis of poly-TFTs under off conditions

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