Double-fin FETs based on standard CMOS approach-Reference-Cited by-同舟云学术

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Double-fin FETs based on standard CMOS approach

Published:2010-05 Issue:5-8 Volume:87 Page:1396-1399
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Zaborowski Michał,Tomaszewski Daniel,Panas Andrzej,Grabiec Piotr

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference3 articles.

1. FinFETs and Other Multi-Gate Transistors;Colinge,2008

2. Narrow paths beyond limits of lithography

3. Semiconductor Material and Device Characterization;Schroder,2006

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3. Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field-effect transistors;Microelectronic Engineering;2016-01

4. Organic Thin Film Transistors: Structures, Models, Materials, Fabrication, and Applications: A Review;Polymer Reviews;2014-01-02

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